Invention Grant
- Patent Title: Laminating magnetic materials in a semiconductor device
- Patent Title (中): 在半导体器件中层叠磁性材料
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Application No.: US11527774Application Date: 2006-09-26
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Publication No.: US07755124B2Publication Date: 2010-07-13
- Inventor: Arnel M. Fajardo , Ebrahim Andideh , Changmin Park , Patrick Morrow
- Applicant: Arnel M. Fajardo , Ebrahim Andideh , Changmin Park , Patrick Morrow
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L21/00
Abstract:
A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.
Public/Granted literature
- US20080075974A1 Laminating magnetic materials in a semiconductor device Public/Granted day:2008-03-27
Information query
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