Invention Grant
US07755129B2 Systems and methods for memory structure comprising a PPROM and an embedded flash memory
有权
用于存储器结构的系统和方法，包括PPROM和嵌入式闪存
- Patent Title: Systems and methods for memory structure comprising a PPROM and an embedded flash memory
- Patent Title (中): 用于存储器结构的系统和方法，包括PPROM和嵌入式闪存
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Application No.: US11203708Application Date: 2005-08-15
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Publication No.: US07755129B2Publication Date: 2010-07-13
- Inventor: Chao I Wu
- Applicant: Chao I Wu
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A memory structure that combines embedded flash memory and PPROM. The PPROM can be used as a memory structure. The flash memory can be used, e.g., as air replacement cells or back up memory, or additional memory cells. The PPROM cells are stacked on top of the flash memory cells and the PPROM density can be increased by implementing three-dimensional PPROM structure.
Public/Granted literature
- US20070034931A1 Systems and methods for memory structure comprising a PPROM and an embedded flash memory Public/Granted day:2007-02-15
Information query
IPC分类:
