Invention Grant
US07755130B2 Minority carrier sink for a memory cell array comprising nonvolatile semiconductor memory cells
失效
用于包含非易失性半导体存储单元的存储单元阵列的少数载波宿
- Patent Title: Minority carrier sink for a memory cell array comprising nonvolatile semiconductor memory cells
- Patent Title (中): 用于包含非易失性半导体存储单元的存储单元阵列的少数载波宿
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Application No.: US11747037Application Date: 2007-05-10
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Publication No.: US07755130B2Publication Date: 2010-07-13
- Inventor: Elard Stein Von Kamienski
- Applicant: Elard Stein Von Kamienski
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A memory cell array of nonvolatile semiconductor memory cells is specified in which a minority carrier sink is formed within a semiconductor body in the region of the memory cell array, the minority carrier sink being arranged outside a space charge zone structure that forms in the semiconductor body during operation of the semiconductor memory cells, and the minority carrier sink having a shorter minority carrier lifetime in comparison with a semiconductor zone reaching as far as a surface of the semiconductor body.
Public/Granted literature
- US20080277717A1 MINORITY CARRIER SINK FOR A MEMORY CELL ARRAY COMPRISING NONVOLATILE SEMICONDUCTOR MEMORY CELLS Public/Granted day:2008-11-13
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