Invention Grant
US07755139B2 Power device with high switching speed and manufacturing method thereof
有权
具有高开关速度的功率器件及其制造方法
- Patent Title: Power device with high switching speed and manufacturing method thereof
- Patent Title (中): 具有高开关速度的功率器件及其制造方法
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Application No.: US10557766Application Date: 2003-05-19
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Publication No.: US07755139B2Publication Date: 2010-07-13
- Inventor: Cesare Ronsisvalle
- Applicant: Cesare Ronsisvalle
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Robert Iannucci
- International Application: PCT/IT03/00298 WO 20030519
- International Announcement: WO2004/102671 WO 20041125
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A power device is formed by a thyristor and by a MOSFET transistor, series-connected between a first and a second current-conduction terminal. The power device moreover has a control terminal connected to an insulated-gate electrode of the MOSFET transistor and receiving a control voltage for turning on/off the device, and a third current-conduction terminal connected to the thyristor for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reverse-bias safe-operating area.
Public/Granted literature
- US20070090415A1 Power device with high switching speed and manufacturing method thereof Public/Granted day:2007-04-26
Information query
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