Invention Grant
- Patent Title: Complementary MISFET formed in a linear body
- Patent Title (中): 在线性体中形成的互补MISFET
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Application No.: US10577526Application Date: 2004-10-27
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Publication No.: US07755141B2Publication Date: 2010-07-13
- Inventor: Yasuhiko Kasama , Kenji Omote , Noboru Kudo
- Applicant: Yasuhiko Kasama , Kenji Omote , Noboru Kudo
- Applicant Address: JP Sendai-Shi
- Assignee: Ideal Star, Inc.
- Current Assignee: Ideal Star, Inc.
- Current Assignee Address: JP Sendai-Shi
- Agency: Young & Thompson
- Priority: JP2003-369228 20031029; JP2003-371640 20031031; JP2003-374789 20031104; JP2003-408349 20031205
- International Application: PCT/JP2004/015934 WO 20041027
- International Announcement: WO2005/041302 WO 20050506
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392

Abstract:
Integrated circuits such as semiconductor memories, image sensors, PLA's, and the like have been formed on rigid, planar substrates such as silicon substrates. This has resulted in shapes without flexibility and limited applicabilities. Further, since multiple circuit elements are continuously formed on a flat surface, it has been impossible to produce a non-defective semiconductor memory unless all the circuit elements are fabricated without defects, making it difficult to improve a yield. It is thus devised to weave or braid linear devices into a fabric shape to prepare a planar semiconductor memory, or to bundle up linear devices to prepare a linear semiconductor memory. The integrated circuit comprising the linear devices is flexible and light-weighted, and is thus usable in various applications. It becomes possible to prepare an integrated circuit by once fabricating linear devices and selecting only non-defective ones therefrom, thereby enabling an improved production yield of integrated circuits.
Public/Granted literature
- US20070278527A1 Complementary Misfet And Integrated Circuit Public/Granted day:2007-12-06
Information query
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