Invention Grant
- Patent Title: Semiconductor device, semiconductor system and semiconductor device manufacturing method
- Patent Title (中): 半导体器件,半导体系统和半导体器件制造方法
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Application No.: US11952373Application Date: 2007-12-07
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Publication No.: US07755147B2Publication Date: 2010-07-13
- Inventor: Shigeo Satoh
- Applicant: Shigeo Satoh
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device is provided with a first conductivity type semiconductor substrate (10); a voltage supplying terminal (26) arranged on the semiconductors substrate (10); one or more elements (6) which include a second conductivity type well section (22) and are arranged on the semiconductor substrate (10); a second conductivity type first conductive layer (21), which is a lower layer of the one or more elements (6), is in contact with the second conductivity type well section (22), and connects the second conductivity type well section (22) of the one or more elements (6) with the voltage supplying terminal (26); and a first conductivity type second conductive layer (11) formed in contact with a lower side of the first conductive layer (21).
Public/Granted literature
- US20080128756A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2008-06-05
Information query
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