Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly

Invention Grant

US07755160B2 Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly 有权

Title translation: 等离子体激发化学气相沉积法硅/氧/含氮材料和分层组装

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Patent Title: Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly
Patent Title (中): 等离子体激发化学气相沉积法硅/氧/含氮材料和分层组装
Application No.: US10586788

Application Date: 2005-01-22
Publication No.: US07755160B2

Publication Date: 2010-07-13
Inventor: Zvonimir Gabric , Werner Pamler , Guenther Schindler
Applicant: Zvonimir Gabric , Werner Pamler , Guenther Schindler
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Slater & Matsil, L.L.P.
Priority: DE102004003337 20040122
International Application: PCT/DE2005/000088 WO 20050122
International Announcement: WO2005/071739 WO 20050804
Main IPC: H01L21/314
IPC: H01L21/314 ; H01L21/469

Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly

Abstract:

A method for producing a layer arrangement is disclosed. A layer of oxygen material and nitrogen material is formed over a substrate that has a plurality of electrically conductive structures and/or over a part of a surface of the electrically conductive structures. The layer is formed using a plasma-enhanced chemical vapor deposition process with nitrogen material being supplied during the supply of silicon material and oxygen material by means of an organic silicon precursor material. The layer of oxygen material and nitrogen material is formed in such a manner that an area free of material remains between the electrically conductive structures. An intermediate layer including an electrically insulating material is formed over the layer of oxygen material and nitrogen material. A covering layer is selectively formed over the intermediate layer such that the area free of material between the electrically conductive structures is sealed from the environment and forms a cavity.

Abstract(Chinese):

公开了一种制造层布置的方法。在具有多个导电结构和/或导电结构的一部分表面上的衬底上形成一层氧材料和氮材料。使用等离子体增强化学气相沉积工艺形成该层，其中在通过有机硅前体材料供应硅材料和氧材料期间供给氮材料。氧材料层和氮材料层以这样的方式形成，使得在导电结构之间保留没有材料的区域。在氧材料层和氮材料层上形成包括电绝缘材料的中间层。在中间层上选择性地形成覆盖层，使得在导电结构之间没有材料的区域与环境密封并形成空腔。

Public/Granted literature

US20080308898A1 Plasma Excited Chemical Vapor Deposition Method Silicon/Oxygen/Nitrogen-Containing-Material and Layered Assembly Public/Granted day:2008-12-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）