Invention Grant
- Patent Title: Antifuse element and semiconductor device including same
- Patent Title (中): 防漏元件和包括其的半导体器件
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Application No.: US12219587Application Date: 2008-07-24
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Publication No.: US07755163B2Publication Date: 2010-07-13
- Inventor: Sumio Ogawa
- Applicant: Sumio Ogawa
- Applicant Address: JP Chou-ku, Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Chou-ku, Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-195979 20070727
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
To provide an antifuse element comprising a gate electrode, a depletion channel region, a gate insulating film between the gate electrode and the channel region, and a diffusion layer region forming a junction with the channel region. An end of the gate electrode coincides substantially with a boundary between the channel region and the diffusion layer region as seen from a planar view, and is formed in a zigzag configuration. The end of the gate electrode is longer than the end with linear configuration and the end of the gate insulating film is likely to be subjected to breakdown.
Public/Granted literature
- US20090026577A1 Antifuse element and semiconductor device including same Public/Granted day:2009-01-29
Information query
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