Invention Grant
- Patent Title: Semiconductor device including switching element and two diodes
- Patent Title (中): 半导体器件包括开关元件和两个二极管
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Application No.: US11776913Application Date: 2007-07-12
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Publication No.: US07755167B2Publication Date: 2010-07-13
- Inventor: Yoshihiko Hirota , Chihiro Tadokoro
- Applicant: Yoshihiko Hirota , Chihiro Tadokoro
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-017913 20070129
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A semiconductor device includes a transistor, a first diode, and a second diode. A collector of the transistor and a cathode of the first diode are electrically connected. The collector of the transistor and a cathode of the second diode are electrically connected, and an emitter of the transistor and an anode of the second diode are electrically connected. The first diode and the second diode are formed in an identical substrate. Thereby, the semiconductor device can be produced in a smaller size and in less steps.
Public/Granted literature
- US20080179704A1 SEMICONDUCTOR DEVICE INCLUDING SWITCHING ELEMENT AND TWO DIODES Public/Granted day:2008-07-31
Information query
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