A transistor structure having a recessed source/drain and buried etch stop layer (e.g., a silicon germanium layer), and a related method, are disclosed. In one embodiment, the transistor structure includes a substrate including a substantially trapezoidal silicon pedestal over an etch stop layer; a gate atop the substantially trapezoidal silicon pedestal; a source/drain region extending into tapered surfaces of the substantially trapezoidal silicon pedestal and into the etch stop layer; and a stress liner overlying the gate and the source/drain region, the stress liner imparting a stress to the source/drain region and a channel of the gate. The recessed source/drain allows recessing without contacting the P-N junction, and allows improved application of stress to the channel.