Invention Grant
US07755172B2 Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth
有权
使用用氨热生长制备的N面或M面GaN衬底的光电子和电子器件
- Patent Title: Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth
- Patent Title (中): 使用用氨热生长制备的N面或M面GaN衬底的光电子和电子器件
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Application No.: US11765629Application Date: 2007-06-20
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Publication No.: US07755172B2Publication Date: 2010-07-13
- Inventor: Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
- Applicant: Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
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