Invention Grant
- Patent Title: Pad structure to provide improved stress relief
- Patent Title (中): 垫结构提供改善的应力消除
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Application No.: US11947184Application Date: 2007-11-29
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Publication No.: US07755206B2Publication Date: 2010-07-13
- Inventor: Mukta G. Farooq , John A. Fitzsimmons , Thomas J. Fleischman
- Applicant: Mukta G. Farooq , John A. Fitzsimmons , Thomas J. Fleischman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb I.P. Law Firm, LLC
- Agent Yuanmin Cai, Esq.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor interconnection comprises a semiconductor device, a substrate adjacent the semiconductor device, and a plurality of spring contacts on the semiconductor device or the substrate. A plurality of solder connections are on the opposite semiconductor device or substrate. Each spring contact comprises a contact surface and a conductive material on the contact surface. Upon assembly of the semiconductor device and the substrate, the conductive material on the plurality of spring contacts makes contact with each of the plurality of solder connections. The conductive material is in a liquid state at manufacturing or operating temperatures of the semiconductor device. Thus, the conductive material could be a solid at room temperature and transition to a liquid state at the semiconductor's manufacturing or operating temperatures.
Public/Granted literature
- US20090140432A1 PAD STRUCTURE TO PROVIDE IMPROVED STRESS RELIEF Public/Granted day:2009-06-04
Information query
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