Invention Grant
- Patent Title: Field emission device and its method of manufacture
- Patent Title (中): 场发射装置及其制造方法
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Application No.: US11798612Application Date: 2007-05-15
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Publication No.: US07755273B2Publication Date: 2010-07-13
- Inventor: Deuk-seok Chung , Yong-chul Kim , Yong-wan Jin , Sun-il Kim , Ho-suk Kang , Chan-wook Baik
- Applicant: Deuk-seok Chung , Yong-chul Kim , Yong-wan Jin , Sun-il Kim , Ho-suk Kang , Chan-wook Baik
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0111891 20061113
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.
Public/Granted literature
- US20080111464A1 Field emission device and its method of manufacture Public/Granted day:2008-05-15
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