Invention Grant
- Patent Title: Correcting offset in magneto-resistive devices
- Patent Title (中): 纠正磁阻器件中的偏移
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Application No.: US12041037Application Date: 2008-03-03
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Publication No.: US07755349B2Publication Date: 2010-07-13
- Inventor: John J James
- Applicant: John J James
- Applicant Address: US MA Andover
- Assignee: MEMSIC, Inc.
- Current Assignee: MEMSIC, Inc.
- Current Assignee Address: US MA Andover
- Agency: Weingarten, Schurgin, Gagnebin & Lebovici LLP
- Main IPC: G01B7/14
- IPC: G01B7/14 ; G01R33/02
Abstract:
Method and apparatus improve sensing accuracy and reduce bias shift in anisotropic magneto-resistive sensors using paired integrators and sampling switches for processing outputs of the sensor on applied set and reset signals with high immunity to temperature variations.
Public/Granted literature
- US20090219011A1 Correcting Offset in Magneto-Resistive Devices Public/Granted day:2009-09-03
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