Invention Grant
- Patent Title: Voltage generating circuit and semiconductor memory device with the same
- Patent Title (中): 电压发生电路和半导体存储器件相同
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Application No.: US11954376Application Date: 2007-12-12
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Publication No.: US07755417B2Publication Date: 2010-07-13
- Inventor: Toshihiro Suzuki
- Applicant: Toshihiro Suzuki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-334285 20061212
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
A voltage generating circuit includes: a pumping circuit configured to boost a power supply voltage in accordance with a charge transfer operation; a voltage detection circuit configured to detect the output voltage of the pumping circuit; a first pumping control circuit configured to control the pumping circuit in accordance with the output of the voltage detection circuit; and a second pumping control circuit configured to control the pumping circuit in place of the first pumping control circuit when the output voltage of the pumping circuit is in a certain range.
Public/Granted literature
- US20080136501A1 VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME Public/Granted day:2008-06-12
Information query
IPC分类:
