Invention Grant
- Patent Title: Microlithography projection objective with crystal lens
- Patent Title (中): 光刻投影物镜配镜晶镜
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Application No.: US10596626Application Date: 2004-12-15
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Publication No.: US07755839B2Publication Date: 2010-07-13
- Inventor: Karl-Heinz Schuster , Wilfried Clauss
- Applicant: Karl-Heinz Schuster , Wilfried Clauss
- Applicant Address: DE Oberkochen
- Assignee: Carl Zeiss SMT AG
- Current Assignee: Carl Zeiss SMT AG
- Current Assignee Address: DE Oberkochen
- Agency: Darby & Darby P.C.
- International Application: PCT/EP2004/014290 WO 20041215
- International Announcement: WO2005/059618 WO 20050630
- Main IPC: G02B3/00
- IPC: G02B3/00 ; G02B9/00 ; G03B27/42

Abstract:
Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.
Public/Granted literature
- US20070091451A1 MICROLITHOGRAPHY PROJECTION OBJECTIVE WITH CRYSTAL LENS Public/Granted day:2007-04-26
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