Invention Grant
- Patent Title: Non-volatile resistance changing for advanced memory applications
- Patent Title (中): 高级内存应用的非易失性电阻变化
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Application No.: US11724788Application Date: 2007-03-16
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Publication No.: US07755922B2Publication Date: 2010-07-13
- Inventor: Masao Taguchi
- Applicant: Masao Taguchi
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Eschweiler & Associates, LLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistance changing memory unit cell includes a resistance changing memory element coupled to a sense bit line and a diode coupled to the resistance changing memory element.
Public/Granted literature
- US20080175035A1 Non-volatile resistance changing for advanced memory applications Public/Granted day:2008-07-24
Information query
