Invention Grant
- Patent Title: Magnetic random access memory and operation method thereof
- Patent Title (中): 磁性随机存取存储器及其操作方法
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Application No.: US11996073Application Date: 2006-07-13
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Publication No.: US07755931B2Publication Date: 2010-07-13
- Inventor: Yuukou Katou
- Applicant: Yuukou Katou
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2005-224096 20050802
- International Application: PCT/JP2006/313988 WO 20060713
- International Announcement: WO2007/015358 WO 20070208
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
The MRAM includes: a memory cell 10 including a magnetoresistance element 1, a current supply circuit and a controller. The current supply circuit supplies, to the magnetoresistance element 1, a write current IW in a direction corresponding to data to be written into the memory cell 10. The controller controls supply of the write current IW from the current supply circuit. The controller also determines whether or not a data is written into the memory cell 10 during a predetermined write period PW in which the write current IW is supplied. The controller instructs the current supply circuit to finish supplying the write current IW when determining that the data is written into the memory cell (10).
Public/Granted literature
- US20090109736A1 MAGNETIC RANDOM ACCESS MEMORY AND OPERATION METHOD THEREOF Public/Granted day:2009-04-30
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