Invention Grant
US07755939B2 System and devices including memory resistant to program disturb and methods of using, making, and operating the same
有权
包括对程序干扰的记忆的系统和装置以及使用，制造和操作它们的方法
- Patent Title: System and devices including memory resistant to program disturb and methods of using, making, and operating the same
- Patent Title (中): 包括对程序干扰的记忆的系统和装置以及使用，制造和操作它们的方法
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Application No.: US12014658Application Date: 2008-01-15
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Publication No.: US07755939B2Publication Date: 2010-07-13
- Inventor: Satoru Tamada
- Applicant: Satoru Tamada
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Disclosed are methods, systems and devices, one such device being a memory device configured to concurrently assert a first pulse pattern through a plurality of conductors disposed on both a source side and a drain side of a floating-gate transistor, wherein a source side of the first pulse pattern has a different median voltage than a drain side of the first pulse pattern.
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