Invention Grant
US07755954B2 Data I/O control signal generating circuit in a semiconductor memory apparatus
有权
半导体存储装置中的数据I / O控制信号发生电路
- Patent Title: Data I/O control signal generating circuit in a semiconductor memory apparatus
- Patent Title (中): 半导体存储装置中的数据I / O控制信号发生电路
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Application No.: US11950172Application Date: 2007-12-04
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Publication No.: US07755954B2Publication Date: 2010-07-13
- Inventor: Chang-Il Kim
- Applicant: Chang-Il Kim
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2006-0123564 20061207
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A circuit for generating a data I/O control signal used in a semiconductor memory apparatus comprises a delay block for generating a delay signal having a relatively short delay value and a delay signal having a relatively long delay values, and a selection block for selecting any one of the delay signals according to an operational mode. The selection block selects an output signal of the first delay unit in a high-speed operation mode and selects an output signal of the second delay unit in a low-speed operation mode.
Public/Granted literature
- US20080137453A1 DATA I/O CONTROL SIGNAL GENERATING CIRCUIT IN A SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2008-06-12
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