Invention Grant
- Patent Title: Semiconductor memory device and method thereof
- Patent Title (中): 半导体存储器件及其方法
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Application No.: US11878087Application Date: 2007-07-20
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Publication No.: US07755958B2Publication Date: 2010-07-13
- Inventor: Young-yong Byun , Hi-choon Lee
- Applicant: Young-yong Byun , Hi-choon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0100383 20061016
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a plurality of comparators receiving output data signals from each of a plurality of sub-array blocks, comparing the output data signals from each of the plurality of sub-array blocks and outputting a plurality of comparison result signals and a test circuit receiving the plurality of comparison result signals from the plurality of comparators, respectively, the test circuit configured to selectively output one of a given one of the plurality of comparison result signals on a given data input/output pad and a given signal obtained by performing a logical operation on at least two of the plurality of comparison result signals on the given data input/output pad in response to a select signal.
Public/Granted literature
- US20080089153A1 Semiconductor memory device and method thereof Public/Granted day:2008-04-17
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