Invention Grant
- Patent Title: Pumped semiconductor laser systems and methods
- Patent Title (中): 泵浦半导体激光系统及方法
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Application No.: US12261391Application Date: 2008-10-30
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Publication No.: US07756175B2Publication Date: 2010-07-13
- Inventor: Robert C. Hoffman
- Applicant: Robert C. Hoffman
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S3/14

Abstract:
A method for emitting laser radiation includes: emitting first laser radiation using a first laser, wherein said first laser is a laser diode; receiving the first laser radiation by a second laser comprising CdSe(1-x)Sx (cadmium selenium sulfide, cadmium selenium, or cadmium sulfide), wherein x is between 0 and 1, inclusively; and responsive to receiving the first laser radiation by the second laser, emitting second laser radiation by the second laser via the CdSe(1-x)Sx; wherein the second laser radiation has a wavelength between 487 nm and 690 nm; and wherein the wavelength of the second laser radiation is responsive to the value of x, which represents the relative concentration of selenium and/or sulfur.
Public/Granted literature
- US20100111124A1 PUMPED SEMICONDUCTOR LASER SYSTEMS AND METHODS Public/Granted day:2010-05-06
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