Invention Grant
- Patent Title: High frequency module
- Patent Title (中): 高频模块
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Application No.: US11449692Application Date: 2006-06-09
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Publication No.: US07756503B2Publication Date: 2010-07-13
- Inventor: Tsutomu Tamaki , Takuya Suzuki , Koichi Matsuo , Hiroshi Kai
- Applicant: Tsutomu Tamaki , Takuya Suzuki , Koichi Matsuo , Hiroshi Kai
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2000-254115 20000824
- Main IPC: H04B1/26
- IPC: H04B1/26

Abstract:
Heretofore, a plurality of packages were used in a high frequency module in which a plurality of waveguide terminals were positioned resulting in problems, such as degradation of characteristics in the connection lines between packages, lower ease of assembly when mounting and connecting the connection lines, increased cost, and so forth. To solve these problems, a plurality of cavities having a part or the entire side metallized is formed in a multi-layer dielectric substrate. The multi-layer dielectric substrate is provided with a plurality of waveguide terminals, microstrip line-waveguide converters, RF lines, bias and control signal wiring, and bias and control signal pads. A high frequency circuit is mounted within the cavity and sealed with a seal and cover. This is intended to reduce the number of package, improve performance, improve fabrication, and lower the cost.
Public/Granted literature
- US20070120732A1 High frequency module Public/Granted day:2007-05-31
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