Invention Grant
- Patent Title: Method for predicting contributions of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation
- Patent Title (中): 在pn结形成期间预测硅间隙对n型掺杂剂瞬态增强扩散的贡献的方法
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Application No.: US11536740Application Date: 2006-09-29
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Publication No.: US07756687B2Publication Date: 2010-07-13
- Inventor: Gyeong S. Hwang , Scott A. Harrison
- Applicant: Gyeong S. Hwang , Scott A. Harrison
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/67

Abstract:
A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.
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