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US07756687B2 Method for predicting contributions of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation 有权
在pn结形成期间预测硅间隙对n型掺杂剂瞬态增强扩散的贡献的方法

Method for predicting contributions of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation
Abstract:
A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.
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