Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems

Invention Grant

US07771563B2 Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems 有权

Title translation: 用于生产微电子机械系统的基板的等温批处理的系统和方法

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Patent Title: Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems
Patent Title (中): 用于生产微电子机械系统的基板的等温批处理的系统和方法
Application No.: US10991554

Application Date: 2004-11-18
Publication No.: US07771563B2

Publication Date: 2010-08-10
Inventor: Robert W. Grant , Benjamin J. Petrone , Paul D. Mumbauer
Applicant: Robert W. Grant , Benjamin J. Petrone , Paul D. Mumbauer
Applicant Address: JP Hyogo
Assignee: Sumitomo Precision Products Co., Ltd.
Current Assignee: Sumitomo Precision Products Co., Ltd.
Current Assignee Address: JP Hyogo
Agency: Cozen O'Connor
Agent Michael B. Fein
Main IPC: H01L21/306
IPC: H01L21/306 ; C03C25/68

Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems

Abstract:

A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.

Abstract(Chinese):

一种用于处理实现多个基板的等温且均匀的流体流动处理条件的基板的系统和方法。在一个方面，本发明是一种系统和方法，利用将处理室的与基板的暴露表面相对的表面的发射率与暴露表面的发射率值相匹配来实现整个衬底叠层的等温条件。在另一方面，本发明是在处理室中处理衬底的系统和方法，其通过消除由于衬底加载开口而导致的处理室轮廓中的空腔或几何不规则性而显示出优异的流体流动均匀性。在另一方面，本发明是一种处理衬底的系统和方法，其中处理室包括衬套和壳体，衬套由高导热性材料（例如碳）构成，壳体由无孔材质，如不锈钢。

Public/Granted literature

US20060102287A1 Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems Public/Granted day:2006-05-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）