Invention Grant
US07771902B2 Photomask, fabrication method for the same and pattern formation method using the same
失效
光掩模，相同的制造方法和使用该掩模的图案形成方法
- Patent Title: Photomask, fabrication method for the same and pattern formation method using the same
- Patent Title (中): 光掩模，相同的制造方法和使用该掩模的图案形成方法
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Application No.: US11884451Application Date: 2007-02-27
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Publication No.: US07771902B2Publication Date: 2010-08-10
- Inventor: Akio Misaka
- Applicant: Akio Misaka
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-063753 20060309
- International Application: PCT/JP2007/053604 WO 20070227
- International Announcement: WO2007/102338 WO 20070913
- Main IPC: G03F1/00
- IPC: G03F1/00 ; H01L21/00
Abstract:
A mask pattern including, for example, a light-shielding portion 101 and a first transparent portion 104A surrounded with a semi-light-shielding portion 102 are provided on a transparent substrate 100. The mask pattern includes a first pattern region and a second pattern region opposing each other with the semi-light-shielding portion 102 and the first transparent portion 104A sandwiched therebetween.
Public/Granted literature
- US20090208851A1 Photomask, Fabrication Method for the Same and Pattern Formation Method Using the Same Public/Granted day:2009-08-20
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