Invention Grant
US07771912B2 Positive resist composition and pattern forming method using the same
有权
正型抗蚀剂组合物和使用其的图案形成方法
- Patent Title: Positive resist composition and pattern forming method using the same
- Patent Title (中): 正型抗蚀剂组合物和使用其的图案形成方法
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Application No.: US11636517Application Date: 2006-12-11
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Publication No.: US07771912B2Publication Date: 2010-08-10
- Inventor: Kei Yamamoto , Shinichi Kanna , Hiromi Kanda
- Applicant: Kei Yamamoto , Shinichi Kanna , Hiromi Kanda
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-356719 20051209; JP2006-075070 20060317; JP2006-257553 20060922
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/20 ; G03F7/30

Abstract:
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.
Public/Granted literature
- US20070134589A1 Positive resist composition and pattern forming method using the same Public/Granted day:2007-06-14
Information query
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