Forming semiconductor fins using a sacrificial fin

Invention Grant

US07772048B2 Forming semiconductor fins using a sacrificial fin 有权

Title translation: 使用牺牲翅片形成半导体翅片

Please log in to see more content

Patent Title: Forming semiconductor fins using a sacrificial fin
Patent Title (中): 使用牺牲翅片形成半导体翅片
Application No.: US11678327

Application Date: 2007-02-23
Publication No.: US07772048B2

Publication Date: 2010-08-10
Inventor: Robert E. Jones , Rickey S. Brownson
Applicant: Robert E. Jones , Rickey S. Brownson
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agent James L. Clingan, Jr.; Robert A. Rodriguez
Main IPC: H01L21/8232
IPC: H01L21/8232

Forming semiconductor fins using a sacrificial fin

Abstract:

A semiconductor device is made by steps of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing sidewalls, and forming fin structures. The step of removing portions of the first capping layer forms a first capping structure that covers portions of the sacrificial layer. The step of removing portions of the sacrificial layer removes portions of the sacrificial layer that are not covered by the first capping structure to define an intermediate structure. The step of recessing the sidewalls recesses sidewalls of the intermediate structure relative to edge regions of the first capping structure to form a sacrificial structure having recessed sidewalls. The step of forming fin structures forms fin structures adjacent to the recessed sidewalls.

Abstract(Chinese):

半导体器件通过去除第一覆盖层的部分，去除牺牲层的部分，凹陷侧壁和形成鳍结构的步骤制成。去除第一覆盖层的部分的步骤形成覆盖牺牲层的部分的第一封盖结构。去除牺牲层的部分的步骤去除牺牲层的不被第一封盖结构覆盖以限定中间结构的部分。凹陷侧壁的中间结构的侧壁相对于第一封盖结构的边缘区域凹陷的步骤形成具有凹陷侧壁的牺牲结构。形成翅片结构的步骤形成与凹陷侧壁相邻的翅片结构。

Public/Granted literature

US20080206934A1 FORMING SEMICONDUCTOR FINS USING A SACRIFICIAL FIN Public/Granted day:2008-08-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺