Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11936721Application Date: 2007-11-07
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Publication No.: US07772049B2Publication Date: 2010-08-10
- Inventor: Randy Hoffman , Peter Mardilovich , Gregory Herman
- Applicant: Randy Hoffman , Peter Mardilovich , Gregory Herman
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/20 ; H01L21/36 ; H01L35/24 ; H01L51/00 ; H01L29/10 ; H01L29/12 ; H01L21/18
Abstract:
An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
Public/Granted literature
- US20080108177A1 Semiconductor Device Public/Granted day:2008-05-08
Information query
IPC分类:
