Invention Grant
- Patent Title: AlGaN/GaN high electron mobility transistor devices
- Patent Title (中): AlGaN / GaN高电子迁移率晶体管器件
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Application No.: US12365719Application Date: 2009-02-04
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Publication No.: US07772055B2Publication Date: 2010-08-10
- Inventor: Marianne Germain , Joff Derluyn , Maarten Leys
- Applicant: Marianne Germain , Joff Derluyn , Maarten Leys
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP04447267 20041130
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.
Public/Granted literature
- US20090191674A1 AIGaN/GaN HIGH ELECTRON MOBILITY TRANSISTOR DEVICES Public/Granted day:2009-07-30
Information query
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