Invention Grant
US07772062B2 MOSFET having a channel mechanically stressed by an epitaxially grown, high k strain layer
有权
具有由外延生长的高k应变层机械应力的沟道的MOSFET
- Patent Title: MOSFET having a channel mechanically stressed by an epitaxially grown, high k strain layer
- Patent Title (中): 具有由外延生长的高k应变层机械应力的沟道的MOSFET
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Application No.: US11053022Application Date: 2005-02-08
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Publication No.: US07772062B2Publication Date: 2010-08-10
- Inventor: Min Cao
- Applicant: Min Cao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A transistor, such a MOSFET, having an epitaxially grown strain layer disposed over a channel region of a substrate for stressing the channel region to increase the carrier mobility in the channel, and method for making same. The strain layer is composed of a high dielectric constant material.
Public/Granted literature
- US20060175671A1 MOSFET having a channel mechanically stressed by an epitaxially grown, high k strain layer Public/Granted day:2006-08-10
Information query
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