中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07772065B2 Semiconductor memory device including a contact with different upper and bottom surface diameters and manufacturing method thereof 有权
包括具有不同上，下表面直径的接触的半导体存储器件及其制造方法

  • Patent Title: Semiconductor memory device including a contact with different upper and bottom surface diameters and manufacturing method thereof
  • Patent Title (中): 包括具有不同上，下表面直径的接触的半导体存储器件及其制造方法
  • Application No.: US12024068
    Application Date: 2008-01-31
  • Publication No.: US07772065B2
    Publication Date: 2010-08-10
  • Inventor: Masahiko Ohuchi
  • Applicant: Masahiko Ohuchi
  • Applicant Address: JP Tokyo
  • Assignee: Elpida Memory, Inc.
  • Current Assignee: Elpida Memory, Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2007-022842 20070201
  • Main IPC: H01L21/8242
  • IPC: H01L21/8242
Semiconductor memory device including a contact with different upper and bottom surface diameters and manufacturing method thereof
Abstract:
A semiconductor memory device includes diffusion regions formed in an active region; cell contacts connected to the diffusion regions, respectively; pillars connected to the cell contacts, respectively; a bit line connected to the pillar; capacitor contacts connected to the pillars, respectively; and storage capacitors connected to the capacitor contacts, respectively. Accordingly, the pillars exist between the cell contacts and the capacitor contacts, and thus, depths of the capacitor contacts are made correspondingly shorter. Therefore, it becomes possible to prevent occurrence of shorting defects while decreasing resistance values of the capacitor contacts.
Abstract(Chinese):

半导体存储器件包括形成在有源区中的扩散区域; 分别连接到扩散区的电池触点; 支柱分别连接到电池触点; 连接到支柱的位线; 电容器触点分别连接到支柱; 和分别连接到电容器触点的存储电容器。 因此，电池触点和电容器触点之间存在支柱，因此使电容器触点的深度相应地更短。 因此，可以防止短路缺陷的发生，同时降低电容器触点的电阻值。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
Patent Agency Ranking
0/0