Invention Grant
- Patent Title: Process for self-aligned manufacture of integrated electronic devices
- Patent Title (中): 集成电子设备的自对准制造工艺
-
Application No.: US12006706Application Date: 2008-01-04
-
Publication No.: US07772084B2Publication Date: 2010-08-10
- Inventor: Roberto Bez , Alessandro Grossi
- Applicant: Roberto Bez , Alessandro Grossi
- Agency: Schwabe Williamson & Wyatt
- Priority: ITTO2002A0997 20021115
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
A process for self-aligned manufacturing of integrated electronic devices includes: forming, in a semiconductor wafer having a substrate, insulation structures that delimit active areas and project from the substrate; forming a first conductive layer, which coats the insulation structures and the active areas; and partially removing the first conductive layer. In addition, recesses are formed in the insulation structures before forming said first conductive layer.
Public/Granted literature
- US20080108200A1 Process for self-aligned manufacture of integrated electronic devices Public/Granted day:2008-05-08
Information query
IPC分类: