Invention Grant
- Patent Title: Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate
- Patent Title (中): 利用加强背衬基板在多层基板上制造器件的方法
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Application No.: US11361834Application Date: 2006-02-24
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Publication No.: US07772088B2Publication Date: 2010-08-10
- Inventor: Francois J. Henley , Harry Robert Kirk , James Andrew Sullivan
- Applicant: Francois J. Henley , Harry Robert Kirk , James Andrew Sullivan
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.
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