Invention Grant
- Patent Title: Method for manufacturing a semiconductor device having a doped silicon film
- Patent Title (中): 具有掺杂硅膜的半导体器件的制造方法
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Application No.: US11765145Application Date: 2007-06-19
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Publication No.: US07772099B2Publication Date: 2010-08-10
- Inventor: Kanta Saino
- Applicant: Kanta Saino
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Priority: JP2006-169765 20060620
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A method for manufacturing a semiconductor device includes the step of depositing a doped silicon layer doped with a first-conductivity-type dopant and a non-doped silicon layer to form a layered silicon film, implanting a first-conductivity-type dopant into a portion of the layered silicon film disposed in a first region, implanting a second-conductivity-type dopant into a portion of the layered silicon film disposed in a second region, and heat treating the layered silicon film to form a first-conductivity-type silicon film in the first region and a second-conductivity-type silicon film in the second region.
Public/Granted literature
- US20070298597A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DOPED SILICON FILM Public/Granted day:2007-12-27
Information query
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