Invention Grant
US07772110B2 Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing
有权
用于集成电路的电触点和使用气体簇离子束处理的成型方法
- Patent Title: Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing
- Patent Title (中): 用于集成电路的电触点和使用气体簇离子束处理的成型方法
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Application No.: US11864334Application Date: 2007-09-28
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Publication No.: US07772110B2Publication Date: 2010-08-10
- Inventor: Rodney L. Robison , Douglas Trickett
- Applicant: Rodney L. Robison , Douglas Trickett
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.
Public/Granted literature
- US20090085211A1 ELECTRICAL CONTACTS FOR INTEGRATED CIRCUITS AND METHODS OF FORMING USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2009-04-02
Information query
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