Invention Grant
- Patent Title: Insulation film forming method, insulation film forming system, and semiconductor device manufacturing method
- Patent Title (中): 绝缘膜形成方法，绝缘膜形成系统和半导体器件制造方法
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Application No.: US10580824Application Date: 2004-11-29
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Publication No.: US07772130B2Publication Date: 2010-08-10
- Inventor: Hidenori Miyoshi , Kazuo Komura
- Applicant: Hidenori Miyoshi , Kazuo Komura
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2003-399827 20031128
- International Application: PCT/JP2004/017692 WO 20041129
- International Announcement: WO2005/053008 WO 20050609
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/00
Abstract:
In a CVD apparatus (111), a reforming process is performed on a porous low dielectric constant film containing silicon, by heating a semiconductor wafer W by a heater, introducing 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), and performing heat treatment without applying a high frequency voltage. Then, in the same CVD apparatus (111), an insulation film having high density and hardness is formed on the porous low dielectric constant film, by heating the semiconductor wafer W, introducing TMCTS, and generating a plasma of a gas containing TMCTS while applying a high frequency voltage.
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