Invention Grant
- Patent Title: Laser irradiation apparatus, laser irradiation method, and manufacturing method for a semiconductor device
- Patent Title (中): 激光照射装置，激光照射方法以及半导体装置的制造方法
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Application No.: US10852259Application Date: 2004-05-25
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Publication No.: US07772519B2Publication Date: 2010-08-10
- Inventor: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2001-359395 20011126
- Main IPC: B23K26/00
- IPC: B23K26/00
Abstract:
The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.
Public/Granted literature
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