Invention Grant
- Patent Title: Laser irradiation apparatus and laser irradiation method
- Patent Title (中): 激光照射装置和激光照射方法
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Application No.: US10586048Application Date: 2005-07-28
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Publication No.: US07772523B2Publication Date: 2010-08-10
- Inventor: Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
- Applicant: Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-224676 20040730
- International Application: PCT/JP2005/014264 WO 20050728
- International Announcement: WO2006/011671 WO 20060202
- Main IPC: B23K26/08
- IPC: B23K26/08 ; B23K26/06

Abstract:
It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method for conducting a laser process homogeneously to the whole surface of a semiconductor film. A first laser beam emitted from a first laser oscillator passes through a slit and a condensing lens and then enters an irradiation surface. At the same time, a second laser beam emitted from a second laser oscillator is delivered so as to overlap the first laser beam on the irradiation surface. Further, the laser beams are scanned relative to the irradiation surface to anneal the irradiation surface homogeneously.
Public/Granted literature
- US20070158315A1 Laser irradiation apparatus and laser irradiation method Public/Granted day:2007-07-12
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