Invention Grant
- Patent Title: Laterally grown nanotubes and method of formation
- Patent Title (中): 侧生长的纳米管和形成方法
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Application No.: US12099557Application Date: 2008-04-08
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Publication No.: US07772584B2Publication Date: 2010-08-10
- Inventor: Marius K. Orlowski , Shahid Rauf , Peter L. G. Ventzek
- Applicant: Marius K. Orlowski , Shahid Rauf , Peter L. G. Ventzek
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; Robert L. King
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts. The lateral opening includes a neck portion and a cavity portion which is used as a constrained space to grow a nanotube. A plasma is used to apply electric charge that forms an electric field which controls the direction of formation of the nanotubes. Nanotubes from each column of metallic catalyst are laterally grown and either abut or merge into one nanotube. Contact to the nanotube may be made from either the neck portion or the columns of metallic catalysts.
Public/Granted literature
- US20080211102A1 LATERALLY GROWN NANOTUBES AND METHOD OF FORMATION Public/Granted day:2008-09-04
Information query
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