Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11369845Application Date: 2006-03-08
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Publication No.: US07772634B2Publication Date: 2010-08-10
- Inventor: Masayoshi Asano , Yoshiyuki Suzuki
- Applicant: Masayoshi Asano , Yoshiyuki Suzuki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-340869 20051125
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A channel stop region is formed immediately under an STI, and thereafter, an ion implantation is performed with conditions in which an impurity is doped into an upper layer portion of an active region, and at the same time, the impurity is also doped into immediately under another STI, and a channel dose region is formed at the upper layer portion of the active region, and another channel stop region is formed immediately under the STI.
Public/Granted literature
- US20070164339A1 Semiconductor device and manufacturing method thereof Public/Granted day:2007-07-19
Information query
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