Provided is a non-volatile memory device that can repetitively perform data write and erase operations in an embedded semiconductor device. In the non-volatile memory device, a device isolation region isolates a first active region and a second active region formed on a semiconductor substrate. A transistor electrode is formed on a first insulating layer in the first active region. A first capacitor electrode is formed on a second insulating layer in the first active region. A second capacitor electrode is formed on a third insulating layer in the second active region and electrically connected to the transistor electrode and the first capacitor electrode.