This disclosure concerns a semiconductor device comprising a convex-shaped semiconductor layer formed on a semiconductor substrate; an insulation film formed on the semiconductor substrate, the insulation film having a film thickness to the extent that a lower part of the semiconductor layer is buried; a gate electrode formed on a set of both opposed side faces via a gate insulation film; and a source region and a drain region formed on a side face side on which the gate electrode is not formed in the semiconductor layer, wherein the semiconductor layer is formed so as to dispose surfaces of a peripheral part excepting a central part on an outer side than surfaces of the central part covered by at least the gate electrode.