Invention Grant
US07772642B2 Power trench gate FET with active gate trenches that are contiguous with gate runner trench
有权
具有与栅极流道沟槽邻接的有源栅极沟槽的功率沟槽栅极FET
- Patent Title: Power trench gate FET with active gate trenches that are contiguous with gate runner trench
- Patent Title (中): 具有与栅极流道沟槽邻接的有源栅极沟槽的功率沟槽栅极FET
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Application No.: US12241481Application Date: 2008-09-30
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Publication No.: US07772642B2Publication Date: 2010-08-10
- Inventor: Bruce Douglas Marchant
- Applicant: Bruce Douglas Marchant
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.
Public/Granted literature
- US20090020810A1 Method of Forming Power Device Utilizing Chemical Mechanical Planarization Public/Granted day:2009-01-22
Information query
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