Invention Grant
US07772663B2 Method and apparatus for bitline and contact via integration in magnetic random access memory arrays
有权
用于通过集成在磁性随机存取存储器阵列中进行位线和接触的方法和装置
- Patent Title: Method and apparatus for bitline and contact via integration in magnetic random access memory arrays
- Patent Title (中): 用于通过集成在磁性随机存取存储器阵列中进行位线和接触的方法和装置
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Application No.: US11677447Application Date: 2007-02-21
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Publication No.: US07772663B2Publication Date: 2010-08-10
- Inventor: Sivananda Kanakasabapathy , Michael C. Gaidis
- Applicant: Sivananda Kanakasabapathy , Michael C. Gaidis
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: G11C11/02
- IPC: G11C11/02
Abstract:
In one embodiment, the invention is a method and apparatus for bitline and contact via integration in magnetic random access memory arrays. One embodiment of a magnetic random access memory according to the present invention includes a magnetic tunnel junction and a top wire that surrounds the magnetic tunnel junction on at least three sides.
Public/Granted literature
- US20080198647A1 METHOD AND APPARATUS FOR BITLINE AND CONTACT VIA INTEGRATION IN MAGNETIC RANDOM ACCESS MEMORY ARRAYS Public/Granted day:2008-08-21
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