Semiconductor device having an improved structure for high withstand voltage

Invention Grant

US07772669B2 Semiconductor device having an improved structure for high withstand voltage 失效

Title translation: 具有改进的高耐压结构的半导体器件

Please log in to see more content

Patent Title: Semiconductor device having an improved structure for high withstand voltage
Patent Title (中): 具有改进的高耐压结构的半导体器件
Application No.: US11540625

Application Date: 2006-10-02
Publication No.: US07772669B2

Publication Date: 2010-08-10
Inventor: Shigeo Tooi , Tetsujiro Tsunoda
Applicant: Shigeo Tooi , Tetsujiro Tsunoda
Applicant Address: JP Tokyo
Assignee: Mitsubishi Electric Corporation
Current Assignee: Mitsubishi Electric Corporation
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2006-150986 20060531
Main IPC: H01L29/93
IPC: H01L29/93

Semiconductor device having an improved structure for high withstand voltage

Abstract:

Second diffusion layers to be guard rings of a second conductivity type are formed on the major surface of a semiconductor substrate of a first conductivity type in a guard ring region. An insulating film is formed on these second diffusion layers. The semiconductor device has a structure wherein a conductive film is formed on the insulating film between adjacent electrodes among a first surface electrode, second surface electrodes, and a third surface electrode.

Abstract(Chinese):

在保护环区域中的第一导电类型的半导体衬底的主表面上形成第二导电类型的保护环的第二扩散层。在这些第二扩散层上形成绝缘膜。半导体器件具有其中在第一表面电极，第二表面电极和第三表面电极中的相邻电极之间的绝缘膜上形成导电膜的结构。

Public/Granted literature

US20070278672A1 Semiconductor device having an improved structure for high withstand voltage Public/Granted day:2007-12-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/93	....电容量可变的二极管，例如变容二极管