Invention Grant
- Patent Title: Semiconductor integrated circuit with spiral inductors
- Patent Title (中): 具有螺旋电感的半导体集成电路
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Application No.: US11727892Application Date: 2007-03-28
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Publication No.: US07772674B2Publication Date: 2010-08-10
- Inventor: Naoko Asahi
- Applicant: Naoko Asahi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2006-095054 20060330
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A spiral inductor, which is formed of a spiral wiring pattern, is formed in an inductor formation region which is assigned within an IC chip. A plurality of dummy wiring lines are formed according to a given design rule on an inside region surrounded by the spiral inductor within the inductor formation region and on an outside region of the spiral inductor within the inductor formation region. Each of the plurality of dummy wiring lines is formed to have such a shape that at least one side of a closed loop is opened, and the plurality of dummy wiring lines are disposed to have regularity and/or uniformity at a given distance from the spiral inductor.
Public/Granted literature
- US20070228515A1 Semiconductor integrated circuit with spiral inductors Public/Granted day:2007-10-04
Information query
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