Strained semiconductor device and method of making same

Invention Grant

US07772676B2 Strained semiconductor device and method of making same 有权

Title translation: 应变半导体器件及其制造方法

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Patent Title: Strained semiconductor device and method of making same
Patent Title (中): 应变半导体器件及其制造方法
Application No.: US11473883

Application Date: 2006-06-23
Publication No.: US07772676B2

Publication Date: 2010-08-10
Inventor: Jin-Ping Han , Hung Y. Ng , Judson R. Holt
Applicant: Jin-Ping Han , Hung Y. Ng , Judson R. Holt
Applicant Address: DE Munich US NY Armonk
Assignee: Infineon Technologies AG,International Business Machines Corporation
Current Assignee: Infineon Technologies AG,International Business Machines Corporation
Current Assignee Address: DE Munich US NY Armonk
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L21/336

Strained semiconductor device and method of making same

Abstract:

A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor material that varies along an interface between the side portion of the compound semiconductor region and the side portion of the semiconductor body

Abstract(Chinese):

半导体本体由诸如硅的第一半导体材料形成。诸如硅锗的化合物半导体区域被嵌入在半导体本体中。化合物半导体区域包括第一半导体材料和第二半导体材料。化合物半导体区域具有沿着化合物半导体区域的侧部与半导体本体的侧部之间的界面变化的第二半导体材料的浓度

Public/Granted literature

US20070295989A1 Strained semiconductor device and method of making same Public/Granted day:2007-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的