A semiconductor device includes an electrode pad formed on a pad forming surface of a semiconductor integrated circuit chip, and a step formed on the pad forming surface to surround the electrode pad. A method of manufacturing the semiconductor device includes forming a metal film on a pad forming surface of a semiconductor integrated circuit chip, forming an electrode pad on a pad forming surface by selectively etching a metal film using a first mask pattern and forming a step to surround the electrode pad by selectively etching the pad forming surface using a second mask pattern.