Invention Grant
- Patent Title: Integrated circuit having improved interconnect structure
- Patent Title (中): 具有改进的互连结构的集成电路
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Application No.: US11422769Application Date: 2006-06-07
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Publication No.: US07772701B2Publication Date: 2010-08-10
- Inventor: Chih-Hsiang Yao , Tai-Chun Huang , Mong-Song Liang
- Applicant: Chih-Hsiang Yao , Tai-Chun Huang , Mong-Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40
Abstract:
An improved integrated circuit structure and method of making the same is provided. The integrated circuit structure comprises a substrate, the substrate having a top surface and a bottom surface. The top surface has a circuit device formed thereon. The structure includes a plurality of metallization layers, a bonding structure formed over the bottom surface and a conductive interconnect structure formed through said substrate.
Public/Granted literature
- US20070284747A1 INTEGRATED CIRCUIT HAVING IMPROVED INTERCONNECT STRUCTURE Public/Granted day:2007-12-13
Information query
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